ICNMM 2021 | Nanjing, China | August 14-16, 2021
2021 4th International Conference on Nanomaterials, Materials and Manufacturing Engineering (ICNMM 2021) was planned to held in Nanjing, China originally. Due to the impact of COVID-19 pandemic, the conference was held virtually during August 14-16, 2021. It is hosted by Southeast University, China and Joint International Resarch Laboratory of Information Display and Visualization. The conference program consists of 3 keynote speeches, 3 invted speeches and 5 oral sessions. ICNMM successfully created a good platform for the students, researchers and engineers to interact with each other. Thank you all for your participation!
				
Group Photo
|   Prof. Juin J. Liou (FIEEE), Shenzhen University, China |   Prof. Xiaoqing Wen (FIEEE), Kyushu Institute of Technology, Japan | 
|   Prof. Daohua Zhang (FInstP, FIET), Nanyang Technological University, Singapore |   Assoc. Prof. Jun Wu, Southeast University, China | 
|   Prof. Byung Seong Bae, Hoseo University, Korea |   Prof. Razika ZAIR TALA-IGHIL, University M’hamed Bougara of Boumerdes, Algeria | 
Best Presentations
				
				
				Session I: 
				Razika Zaïr Tala-Ighil, University M’hamed Bougara of Boumerdes, Algeria
Paper Title: Numerical Simulation of Organic Solar Cells using SCAPS Software
				
				
				Session II: 
				Z J Weng, Southeast University, China
Paper Title: Compliance Current-dependent Dual-functional Unipolar and Threshold Resistive Switching in Silver Nanowires-egg Albumen Composites-based Device
Session III:
				Yilin Sun, Beijing Institute of Technology, China
Paper Title: Neuromorphic Optoelectronic Transistors based on MoS2/QDs Mixed-dimensional Heterojunction
				Session IV:
				Shipeng Lin, Southeast University, China
Paper Title: A Passive, Skin-Attachable Multi-Sensing Patch Based on Semi-Liquid Alloy Ni-GaIn for Wireless Epidermal Signal Monitoring and Body Motion Capturing
				Session V:
				Guofang Yu, Tsinghua University, China
Paper Title: Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range
  				
